Product Index > Discrete Semiconductor Products > Transistors – IGBTs – Single > Toshiba Semiconductor and Storage GT60N(Q). Obsolete item. Photo Not. TOSHIBA GT60N(Q) | Transistor: IGBT; V; 60A; W; TO3P – This product is available in Transfer Multisort Elektronik. Check out our wide range of . GT60N 1. TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT. GT60N High Power Switching Applications. The 4th.
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The product does not contain any of the restricted substances gt60n3221 concentrations and applications banned by the Directive, and for components, the product is capable of being worked on at the higher temperatures required by lead—free soldering. Ships within days, Delivery estimate: The other products non Joybuy c products will be charged separately.
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The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low—saturation-voltage capability gt60m321 bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as gt6n321 switch, in a single device.
The product detailed below complies with the specifications published by RS Components.
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Free shipping 10pieces/lot GT60N321 IGBT 1000V 60A 170W TO3P IC Best quality
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